onsemi HGTG30N60B3D..

HGTG30N60B3D Series 600 V 60 A Flange Mount UFS N-Channel IGBT-TO-247

600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast

Trans IGBT Chip N-CH 600V 60A 208000mW 3-Pin(3+Tab) TO-247 Tube

Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247

IGBT Transistors 600V IGBT UFS N-Channel

IGBT,N CH,600V,30A,TO-247; Transistor Type:IGBT; DC Collector Current:60A; Collector Emitter Voltage Vces:1.9V; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:208W

The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49170. The diode used in anti-parallel with the IGBT is the development type TA49053.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Formerly Developmental Type TA49172.