공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 4 months ago)
설명
유통업체에서 제공한 STMicroelectronics STGW20NC60VD에 대한 설명입니다.
Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Tube
STMICROELECTRONICS STGW20NC60VD IGBT Single Transistor, 60 A, 2.5 V, 200 W, 600 V, TO-247, 3 Pins
IGBTs Insulated Gate Bipolar Transistor N-Ch 600 Volt 30 Amp
200W 60A 600V TO-247AC-3 IGBT Transistors / Modules ROHS
TRANSISTOR IGBT N-CH 600V 60A TO247
IGBT, 600V, 20A, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; O
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight38.000013 g
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2.5 V
Collector Emitter Voltage (VCEO)600 V
Continuous Collector Current30 A
Current Rating30 A
Element ConfigurationSingle
Max Collector Current60 A
Max Operating Temperature150 °C
Max Power Dissipation200 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation200 W
Reverse Recovery Time44 ns
Rise Time11.5 ns
Turn-Off Delay Time100 ns
Turn-On Delay Time31 ns
Voltage Rating (DC)600 V
Dimensions
Height20.15 mm
Length15.75 mm
Width5.15 mm