공급망
Country of OriginGermany, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-10-10
Lifecycle StatusProduction (Last Updated: 2 weeks ago)
관련 부품
onsemiSGW23N60UFDTM
Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-263AB
STMicroelectronicsSTGB10M65DF2
IGBT 650V 10A D2PAK / IGBT Trench Field Stop 650 V 20 A 115 W Surface Mount D²PAK (TO-263)
설명
유통업체에서 제공한 Infineon IGB10N60TATMA1에 대한 설명입니다.
Infineon IGB10N60TATMA1 IGBT, 10 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount
IGB10N60T Series 600 V 20 A 110 W Surface Mount Low Loss IGBT - TO-263-3
IGBT,600V,10A,TO263; Transistor Type:IGBT; DC Collector Current:10A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:110W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:110W
Hard-switching 600 V, 10 A single TRENCHSTOP™ IGBT3 Discrete in TO263 D2Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The highest efficiency is reached due to the best compromise between switching and conduction losses.
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기술 사양
Physical
Case/PackageTO-263-3
Number of Pins3
Number of Terminals2
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2.05 V
Collector Emitter Voltage (VCEO)600 V
Element ConfigurationSingle
Max Breakdown Voltage600 V
Max Collector Current20 A
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Operating Temperature-40 °C
Number of Elements1
Package Quantity1000
PackagingTape & Reel
Power Dissipation110 W
Schedule B8541290080
Dimensions
Height4.57 mm
Length10.31 mm
Width9.45 mm