가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | STGB10M65DF2 | 55 | 1 | Cut Tape | ||||||||
| TME | STGB10M65DF2 | 0 | 1 | 4h | ||||||||
| Avnet | STGB10M65DF2 | 0 | 1K | 8h | ||||||||
| Farnell | STGB10M65DF2 | 55 | 1 | Cut Tape | 1d | |||||||
| element14 APAC | STGB10M65DF2 | 55 | 1 | Cut Tape | 19h |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2015-06-11
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
onsemiHGT1S3N60A4DS9A
Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-263AB
STMicroelectronicsSTGB7H60DF
H Series 600 V 7 A Surface Mount Trench Gate Field-Stop IGBT - D2PAK
onsemiSGW23N60UFDTM
Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-263AB
설명
유통업체에서 제공한 STMicroelectronics STGB10M65DF2에 대한 설명입니다.
IGBT 650V 10A D2PAK / IGBT Trench Field Stop 650 V 20 A 115 W Surface Mount D²PAK (TO-263)
Trans IGBT Chip N-CH 650V 20A 115000mW 3-Pin(2+Tab) D2PAK T/R
Trench gate field-stop IGBT M series, 650 V 10 A low loss
IGBT, SINGLE, 650V, 20A, TO-263-3; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 115W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Collector Base Breakdown Voltage (VCES)650 V
Collector Emitter Breakdown Voltage650 V
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)650 V
Element ConfigurationSingle
Forward Current10 A
Forward Voltage1.5 V
Max Breakdown Voltage650 V
Max Collector Current20 A
Max Operating Temperature175 °C
Max Power Dissipation115 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Reverse Recovery Time96 ns