공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-02-16
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2017-10-19
LTD Date2018-04-19
관련 부품
onsemiHGT1S3N60A4DS9A
Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-263AB
STMicroelectronicsSTGB10M65DF2
IGBT 650V 10A D2PAK / IGBT Trench Field Stop 650 V 20 A 115 W Surface Mount D²PAK (TO-263)
STMicroelectronicsSTGB7H60DF
H Series 600 V 7 A Surface Mount Trench Gate Field-Stop IGBT - D2PAK
설명
유통업체에서 제공한 Infineon IRGS4064DPBF에 대한 설명입니다.
Trans IGBT Chip N-CH 600V 20A 3-Pin(2+Tab) D2PAK Tube
Low Switching Losses Square RBSOA | IGBT 600V 20A 101W D2PAK
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Weight260.39037 mg
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.6 V
Collector Emitter Voltage (VCEO)600 V
Element ConfigurationSingle
Fall Time29 ns
Max Collector Current20 A
Max Operating Temperature175 °C
Max Power Dissipation101 W
Min Operating Temperature-55 °C
Reverse Recovery Time62 ns
Rise Time23 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책