onsemi SGW23N60UFDTM
$ 0.99
Obsolete
관련 부품
onsemiFGB20N6S2D
Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-263AB
InfineonIRGS14C40LPBF
IGBT with on-chip Gate-Emitter and Gate-Collector clamps | IGBT 430V 20A 125W D2PAK
설명
유통업체에서 제공한 onsemi SGW23N60UFDTM에 대한 설명입니다.
Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-263AB
IGBT 600V 23A 100W D2PAK
Tape & Reel (TR) Surface Mount N-CHANNEL SINGLE WITH BUILT-IN DIODE IGBT Transistor 2.6V @ 15V 12A 23A 100W 60ns
IGBT 600V 23A TO-263
MISCELLANEOUS MOSFETS;
IGBTs 600V/ 12A
N-CHANNEL IGBT
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2.1 V
Collector Emitter Voltage (VCEO)600 V
Current Rating12 A
Element ConfigurationSingle
Fall Time220 ns
Max Collector Current23 A
Max Operating Temperature150 °C
Max Power Dissipation100 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation100 W
Reverse Recovery Time42 ns
Voltage Rating (DC)600 V