Infineon BSS126H6327XTSA2

Transistor: N-MOSFET; unipolar; 600V; 21mA; 700ohm; -55+150 deg.C; SMD; SOT23

Power MOSFET, N Channel, 600 V, 21 mA, 500 Ohm, SOT-23, 3 Pins, Surface Mount

Single N-Channel 600 V 500 Ohm 1.4 nC SIPMOS® Small Signal Mosfet - SOT-23

Trans MOSFET N-CH 600V 0.021A Automotive 3-Pin SOT-23 T/R

SIPMOS SMALL-SIGNAL-TRANSISTOR Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

MOSFET, N-CH, 600V, 21MA, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:21mA; Drain Source Voltage Vds:600V; On Resistance Rds(on):280ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:-2V; Power Dissipation Pd:500mW; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:(Not Available); SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C

Infineon is one of the few semiconductor manufacturers worldwide to offer depletion MOSFETs.Areas of application include power supply startup power, over-voltage protection, in-rush-current limiter, off-line voltage reference. With one single component it is possible to realize a simple current regulator. All products are suitable for automotive applications. In order to meet special requirements, depletion MOSFETs are available with V GS(th) indicator on the reel.

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 60 / Drain-Source Voltage (Vds) V = 600 / ON Resistance (Rds(on)) Ohm = 500 / Gate-Source Voltage V = 20 / Fall Time ns = 115 / Rise Time ns = 9.7 / Turn-OFF Delay Time ns = 14 / Turn-ON Delay Time ns = 6.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500