대체 부품
Price @ 1000
$ 0.061
$ 0.077
$ 0.077
Stock
3,823,297
63,294,129
63,294,129
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOT-23-3
SOT-23
SOT-23
Drain to Source Voltage (Vdss)
50 V
50 V
50 V
Continuous Drain Current (ID)
200 mA
220 mA
220 mA
Threshold Voltage
1.25 V
1.3 V
1.3 V
Rds On Max
3.5 Ω
3.5 Ω
3.5 Ω
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
225 mW
360 mW
360 mW
Input Capacitance
50 pF
27 pF
27 pF
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-10-31
Lifecycle StatusEOL (Last Updated: 4 days ago)
LTB Date2026-01-01
LTD Date2026-07-01
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)
관련 부품
Diodes Inc.2N7002E-7-F
Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R / MOSFET N-CH 60V 0.25A SOT23-3
InfineonBSS84PH6433XTMA1
BSS84P Series 60 V 8 Ohm P-Channel SIPMOS® Small-Signal-Transistor - SOT-23-3
설명
유통업체에서 제공한 onsemi BSS138L에 대한 설명입니다.
N-Channel Power MOSFET, Logic Level, 50V, 200mA, 3.5Ω
N-Channel 50 V 3.5 O 2.4 nC Logic Level Enhancement Mode Mosfet - SOT-23
Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, N-CHANNEL, 50V, 0.2A, SOT-23-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 2.; Available until stocks are exhausted Alternative available
This N-channel enhancement mode field effect transistor is produced using high cell density, trench MOSFET technology.This product minimizes on-state resistance while providing rugged, reliable, and fast switching performance. This product is particularly suited for low-voltage, lowcurrent applications such as small servo motor control, power MOSFET gate drivers, logic level translator, high speed line drivers, power management/power supply and switching applications.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 200 / Drain-Source Voltage (Vds) V = 50 / ON Resistance (Rds(on)) Ohm = 10 / Gate-Source Voltage V = 20 / Fall Time ns = 14 / Rise Time ns = 18 / Turn-OFF Delay Time ns = 36 / Turn-ON Delay Time ns = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) mW = 350
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Continuous Drain Current (ID)200 mA
Drain to Source Breakdown Voltage50 V
Drain to Source Resistance10 Ω
Drain to Source Voltage (Vdss)50 V
Element ConfigurationSingle
Fall Time5.1 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance50 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Breakdown Voltage50 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation225 mW
Rds On Max3.5 Ω
Rise Time1.8 ns
Schedule B8541210080
Threshold Voltage1.25 V
Turn-Off Delay Time20 ns
Turn-On Delay Time20 ns
Dimensions
Height1.11 mm