대체 부품
Price @ 1000
$ 0.872
$ 0.976
$ 0.976
Stock
103,487
600,151
600,151
Authorized Distributors
3
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
DPAK
Drain to Source Voltage (Vdss)
40 V
40 V
40 V
Continuous Drain Current (ID)
42 A
42 A
42 A
Threshold Voltage
2 V
-
-
Rds On Max
9 mΩ
9 mΩ
9 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
90 W
90 W
90 W
Input Capacitance
1.51 nF
1.51 nF
1.51 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-04-12
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2021-08-15
LTD Date2022-02-15
관련 부품
InfineonIPD50N04S408ATMA1
Power MOSFET, N Channel, 40 V, 50 A, 7.9 mOhm, TO-252 (DPAK), 3 Pins, Surface Mount
InfineonIPD50N04S308ATMA1
40V, N-Ch, 7.5 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T, PG-TO252-3, RoHS
설명
유통업체에서 제공한 Infineon AUIRFR3504Z에 대한 설명입니다.
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D-Pak Package
HEXFET POWER MOSFET Power Field-Effect Transistor, 42A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET,N CH,SCH DIODE,40V,42A,DPAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:40V; On Resistance Rds(on):8230µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:90W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:2; SVHC:No SVHC (19-Dec-2011); Current Id Max:77A; Power Dissipation Pd:90W; Voltage Vgs Max:20V
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
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- INFINEN
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- INFIENON
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- INFINEON/IR
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)42 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance9 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time38 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.51 nF
Max Operating Temperature175 °C
Max Power Dissipation90 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation90 W
Rds On Max9 mΩ
Rise Time74 ns
Threshold Voltage2 V
Turn-Off Delay Time30 ns
Turn-On Delay Time15 ns
Dimensions
Height2.3876 mm
Length6.7056 mm
Width6.22 mm