대체 부품
Price @ 1000
$ 0.38
$ 0.904
Stock
106,904
306,898
Authorized Distributors
2
6
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
75 A
75 A
Threshold Voltage
2 V
4 V
Rds On Max
10 mΩ
10 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
200 W
200 W
Input Capacitance
5.15 nF
5.15 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-11-23
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2020-11-15
LTD Date2021-05-15
관련 부품
InfineonIRFB4410PBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 8 Milliohms;ID 88A;TO-220AB;PD 200W;VF 1.3V
InfineonIRFB4410ZGPBF
100V Single N-Channel HEXFET Power MOSFET in a Lead Free Halogen Free TO-220AB package
설명
유통업체에서 제공한 Infineon AUIRFB4410에 대한 설명입니다.
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package
Trans MOSFET N-CH 100V 88A Automotive 3-Pin(3+Tab) TO-220AB Tube
AUTOMOTIVE GRADE HEXFET POWER MOSFET Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
MOSFET,W DIO,N CH,100V,75A,TO220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:88A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.008ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:200W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; Voltage Vgs Max:20V
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- Infineon Technologies
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- INFINEON TECHNOLOGIE
- NFINEON
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- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)75 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance10 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time50 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.15 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Elements1
On-State Resistance10 mΩ
Package Quantity1000
PackagingRail/Tube
Power Dissipation200 W
Rds On Max10 mΩ
Rise Time80 ns
Threshold Voltage2 V
Turn-Off Delay Time55 ns
Turn-On Delay Time24 ns
Dimensions
Height16.51 mm
Length10.67 mm
Width4.83 mm