대체 부품
Price @ 1000
$ 0.625
$ 2.09
Stock
681,972
181,114
Authorized Distributors
6
2
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
97 A
97 A
Threshold Voltage
2 V
-
Rds On Max
9 mΩ
9 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
230 W
230 W
Input Capacitance
4.82 nF
4.82 nF
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-03-06
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
관련 부품
InfineonIRFB4410PBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 8 Milliohms;ID 88A;TO-220AB;PD 200W;VF 1.3V
InfineonIRF2807PBF
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 13 Milliohms;ID 82A;TO-220AB;PD 230W;gFS 38S
설명
유통업체에서 제공한 Infineon IRFB4410ZPBF에 대한 설명입니다.
IRFB4410ZPBF N-channel MOSFET Transistor, 97 A, 100 V, 3-Pin TO-220AB
MOSFET N-CH 100V 97A TO-220AB / Trans MOSFET N-CH Si 100V 97A 3-Pin(3+Tab) TO-220AB Tube
Single N-Channel 100 V 9 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Power MOSFET, N Channel, 100 V, 97 A, 0.008 ohm, TO-220AB, Through Hole
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 230 W
100V 97A 9m´Î@10V58A 230W 4V@150Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 100V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:97A; Drain Source Voltage Vds:100V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:230W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4410; Current Id Max:96A; N-channel Gate Charge:83nC; Package / Case:TO-220AB; Power Dissipation Pd:230W; Power Dissipation Pd:230mW; Pulse Current Idm:390A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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- Infineon Technologies
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- INFINEON/IR
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- INFINEON/SIEMENS
- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)97 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance9 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time57 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.82 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation230 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance9 mΩ
Package Quantity1000
Power Dissipation230 W
Rds On Max9 mΩ
Recovery Time57 ns
Resistance9 MΩ
Rise Time52 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage2 V
Turn-Off Delay Time43 ns
Turn-On Delay Time16 ns
Dimensions
Height19.8 mm
Length10.6426 mm
Width4.82 mm