가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | AUIRF4104S | 9,251 | 18h | |||||||||
| RS (Formerly Allied Electronics) | AUIRF4104S | 0 | 3K | Bulk | 11h | |||||||
| Farnell | AUIRF4104S | 0 | 1 | 19h | ||||||||
| Microchip USA | AUIRF4104S | 345 | 300 | Bulk | 11h | |||||||
| Win Source | WS-435362 | 2,600 | 30 | 19h |
대체 부품
Price @ 1000
$ 1.15
$ 1.4
$ 1.4
Stock
84,932
23,112
23,112
Authorized Distributors
3
3
3
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
40 V
40 V
40 V
Continuous Drain Current (ID)
75 A
75 A
75 A
Threshold Voltage
2 V
-
-
Rds On Max
5.5 mΩ
5.5 mΩ
5.5 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
140 W
140 W
140 W
Input Capacitance
3 nF
3 nF
3 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-03-29
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2021-08-15
LTD Date2022-02-15
관련 부품
InfineonIPB80N04S404ATMA1
Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R / OptiMOS-T2 Power-Transistor
InfineonIPB80N04S306ATMA1
40V, N-Ch, 5.4 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T, PG-TO263-3, RoHS
설명
유통업체에서 제공한 Infineon AUIRF4104S에 대한 설명입니다.
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package
Trans MOSFET N-CH Si 40V 120A Automotive 3-Pin(2+Tab) D2PAK Tube
HEXFET POWER MOSFET Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N CH, 40V, 75A, D2PAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:40V; On Resistance Rds(on):4.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:140W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:120A; Power Dissipation Pd:140W; Voltage Vgs Max:20V
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance5.5 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time77 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation140 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation140 W
Rds On Max5.5 mΩ
Rise Time130 ns
Threshold Voltage2 V
Turn-Off Delay Time38 ns
Turn-On Delay Time16 ns
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm