onsemi FDB8896

N-Channel PowerTrench® MOSFET, 30V, 93A, 5.7mΩ
Obsolete
제조업체 페이지데이터시트

가격 및 재고

모든 가격 할인 보기
DistributorSKUMinPkg
AvnetFDB8896800575
22h
Flip ElectronicsFDB8896800
6d
Microchip USAFDB8896167300Tray
6d
Component Stockers USAFDB8896158
>1wk
Win SourceWS-FDB88965,00050
20h

데이터시트 및 문서

onsemi FDB8896에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

IHS

Datasheet11 페이지21년 전
Datasheet0 페이지0년 전

onsemi

Farnell

Mouser

Fairchild Semiconductor

재고 내역

3개월간의 트렌드:
-14.29%
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대체 부품

이 부품
대체 부품
onsemiFDB8896
onsemiFDB7042L
onsemiFDB7042L
Price @ 1000
$ 0.654
$ 0.654
Stock
156,967
487,693
487,693
Authorized Distributors
2
2
2
Mount
Surface Mount
-
-
Case/Package
TO-263-3
-
-
Drain to Source Voltage (Vdss)
30 V
-
-
Continuous Drain Current (ID)
80 A
50 A
50 A
Threshold Voltage
2.5 V
-
-
Rds On Max
5.7 mΩ
-
-
Gate to Source Voltage (Vgs)
20 V
12 V
12 V
Power Dissipation
80 W
83 W
83 W
Input Capacitance
2.525 nF
-
-

공급망

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-04-15
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2021-10-08
LTD Date2022-04-08
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

관련 부품

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Trans MOSFET N-CH 30V 19A Automotive 3-Pin(2+Tab) D2PAK T/R
세부 사항
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IRL8113SPBF N-channel MOSFET Transistor, 105 A, 30 V, 3-Pin D2PAK
세부 사항
onsemiFDB6670AL
Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R
세부 사항
onsemiFDB8876
MOSFET N-CH 30V 71A D2PAK
세부 사항
InfineonIPB120N03S4L03ATMA1
MOSFET N-CH 30V 120A D2PAK / N-Channel 30 V 120A (Tc) 79W (Tc) Surface Mount PG-TO263-3
세부 사항
InfineonIPB80N03S4L02ATMA1
30V, N-Ch, 2.4 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
세부 사항

설명

유통업체에서 제공한 onsemi FDB8896에 대한 설명입니다.

N-Channel PowerTrench® MOSFET, 30V, 93A, 5.7mΩ
onsemi
N-Channel 30 V 5.7 mOhm Surface Mount PowerTrench® Mosfet - TO-263AB
Future Electronics
Trans MOSFET N-CH 30V 19A 3-Pin(2+Tab) D2PAK T/R
Avnet
Power Field-Effect Transistor, 80A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IHS
MOSFET, N CH, 30V, 93A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:93A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0049ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:80W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
Farnell
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Fairchild Semiconductor

이미지

Augswan
TME
element14 APAC
RS
Farnell
Future Electronics
Rochester Electronics
iiiC

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