가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRF4104SPBF | 50,354 | 18h | |||||||||
| RS (Formerly Allied Electronics) | IRF4104SPBF | 0 | 600 | Bulk | 11h | |||||||
| Farnell | IRF4104SPBF | 0 | 1 | 19h | ||||||||
| Mouser | 942-IRF4104SPBF | 52 | 1 | Tube | ||||||||
| Microchip USA | IRF4104SPBF | 1,130 | 3K | Tube | 11h |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-04-04
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-09-30
LTD Date2025-03-31
관련 부품
InfineonIPB80N04S404ATMA1
Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R / OptiMOS-T2 Power-Transistor
InfineonIPB80N04S306ATMA1
40V, N-Ch, 5.4 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T, PG-TO263-3, RoHS
설명
유통업체에서 제공한 Infineon IRF4104SPBF에 대한 설명입니다.
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Transistor MOSFET N Channel 40 Volt 120 Amp 3-Pin 2+ Tab D2pak
MOSFET, N Ch., Automotive, 40V, 120A, 5.5 MOHM, 68 NC QG, D2-PAK, Pb-Free
Single N-Channel 75 V 5.5 mOhm 68 nC HEXFET® Power Mosfet - D2PAK
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 140 W
MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):5.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Avalanche Single Pulse Energy Eas:120mJ; Capacitance Ciss Typ:3000pF; Current Id Max:75A; Package / Case:D2-PAK; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:470A; Reverse Recovery Time trr Typ:23ns; SMD Marking:F4104; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
제조업체 별칭
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- Infineon Technologies
- INF
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- INFIN
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- INFI
- INFENION
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- INFINEON TECH
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- INFINEON/IR
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- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Current Rating75 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance5.5 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time77 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation140 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance5.5 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation140 W
Rds On Max5.5 mΩ
Recovery Time35 ns
Resistance5.5 MΩ
Rise Time130 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time38 ns
Turn-On Delay Time16 ns
Voltage Rating (DC)40 V
Dimensions
Height5.084 mm
Length10.67 mm
Width9.65 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책