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Price @ 1000
$ 1.18
$ 0.913
Stock
38,897
632,736
Authorized Distributors
3
6
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
150 V
150 V
Continuous Drain Current (ID)
43 A
43 A
Threshold Voltage
2 V
4 V
Rds On Max
42 mΩ
42 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
200 W
150 W
Input Capacitance
2.4 nF
2.4 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-01-19
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2020-01-31
LTD Date2021-07-31
관련 부품
InfineonIRF3415PBF
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.042Ohm;ID 43A;TO-220AB;PD 200W;VGS +/-20V
InfineonIRFB5615PBF
150V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
설명
유통업체에서 제공한 Infineon AUIRF3415에 대한 설명입니다.
Automotive Q101 150V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package
Trans MOSFET N-CH 150V 43A 3-Pin(3+Tab) TO-220AB Tube
Power Field-Effect Transistor, 43A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 150V, 43A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:43A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.042ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:200W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; MSL:MSL 1 - Unlimited
Benefits: Advanced planar technology; Dynamic dV/dT rating; 175C operating temperature; Fast switching; Fully Avalanche Rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
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- IR/INFINEON
- INFINEON/IR
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- INFINEON/SIEMENS
- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)43 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance42 mΩ
Drain to Source Voltage (Vdss)150 V
Element ConfigurationSingle
Fall Time69 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.4 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Elements1
On-State Resistance42 mΩ
Package Quantity1000
Power Dissipation200 W
Rds On Max42 mΩ
Rise Time55 ns
Threshold Voltage2 V
Turn-Off Delay Time71 ns
Turn-On Delay Time12 ns
Dimensions
Height16.51 mm
Length10.66 mm
Width4.82 mm