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이 부품
대체 부품
Price @ 1000
$ 1.16
Stock
191,057
170,300
Authorized Distributors
2
6
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
150 V
150 V
Continuous Drain Current (ID)
45.6 A
45 A
Threshold Voltage
4 V
4 V
Rds On Max
42 mΩ
40 mΩ
Gate to Source Voltage (Vgs)
25 V
30 V
Power Dissipation
210 W
220 W
Input Capacitance
3.25 nF
3.03 nF
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-05-26
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
관련 부품
InfineonIRF3415PBF
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.042Ohm;ID 43A;TO-220AB;PD 200W;VGS +/-20V
InfineonIRFB52N15DPBF
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 32Milliohms;ID 51A;TO-220AB;PD 230W;-55deg
설명
유통업체에서 제공한 onsemi FQP46N15에 대한 설명입니다.
Trans MOSFET N-CH 150V 45.6A 3-Pin(3+Tab) TO-220 Tube / MOSFET N-CH 150V 45.6A TO-220
N-Channel 150 V 0.042 Ohm Flange Mount Mosfet - TO-220
N-Channel QFET® MOSFET 150V, 45.6A, 42mΩ
150 V QFET N-CHANNEL MOSFET Power Field-Effect Transistor, 45.6A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 150V, 45.6A, TO-220AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 45.6A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs:
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Continuous Drain Current (ID)45.6 A
Current45 A
Current Rating45.6 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance42 mΩ
Drain to Source Voltage (Vdss)150 V
Element ConfigurationSingle
Fall Time200 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance3.25 nF
Max Operating Temperature175 °C
Max Power Dissipation210 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation210 W
Rds On Max42 mΩ
Resistance42 mΩ
Rise Time320 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time210 ns
Turn-On Delay Time35 ns
Voltage150 V
Voltage Rating (DC)150 V
Dimensions
Height9.4 mm
Length10.1 mm
Width4.7 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책