공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2021-04-28
Lifecycle StatusProduction (Last Updated: 3 months ago)
관련 부품
설명
유통업체에서 제공한 Infineon IRFB5615PBF에 대한 설명입니다.
150V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Single N-Channel 150 V 39 mOhm 26 nC HEXFET® Power Mosfet - TO-220-3
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 144 W
Trans MOSFET N-CH 150V 150A 3-Pin(3+Tab) TO-220AB Tube
Power Field-Effect Transistor, 35A I(D), 150V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET DIG AUDIO CLASS D 150V TO220AB; Transistor Polarity:N Channel; On State Resistance:39mohm; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; Case Style:TO-220AB; Cont Current Id:21A; Max Voltage Vgs th:20V; Power Dissipation Pd:144W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Typ Voltage Vds:150V; Typ Voltage Vgs th:5V; Voltage Vgs Rds on Measurement:10V
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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기술 사양
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)35 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance39 mΩ
Drain to Source Voltage (Vdss)150 V
Element ConfigurationSingle
Fall Time13.2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.75 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation144 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels1
Number of Elements1
On-State Resistance39 mΩ
Package Quantity1000
Power Dissipation144 W
Rds On Max39 mΩ
Recovery Time120 ns
Resistance39 MΩ
Rise Time23.1 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time17.2 ns
Turn-On Delay Time8.9 ns
Dimensions
Height19.8 mm
Length10.668 mm
Width4.826 mm