대체 부품
Price @ 1000
$ 1.62
$ 1.61
Stock
65,547
155,467
Authorized Distributors
3
4
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
30 V
30 V
Continuous Drain Current (ID)
160 A
75 A
Threshold Voltage
2 V
4 V
Rds On Max
2.4 mΩ
2.4 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
290 W
290 W
Input Capacitance
6.32 nF
6.32 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-06-22
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2020-11-15
LTD Date2021-05-15
관련 부품
InfineonIRLB8314PBF
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
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MOSFET N-CH 30V 80A TO220-3 / N-Channel 30 V 80A (Tc) 188W (Tc) Through Hole PG-TO220-3-1
STMicroelectronicsSTP160N3LL
N-channel 30 V, 2.5 mOhm typ., 120 A, STripFET H6 Power MOSFET in a TO-220 package
설명
유통업체에서 제공한 Infineon AUIRF2903Z에 대한 설명입니다.
Automotive Q101 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS
Infineon SCT
Trans MOSFET N-CH Si 30V 260A Automotive 3-Pin(3+Tab) TO-220AB Tube
HEXFET POWER MOSFET Power Field-Effect Transistor, 160A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)160 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance2.4 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time37 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.32 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation290 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
On-State Resistance2.4 mΩ
Package Quantity1000
Power Dissipation290 W
Rds On Max2.4 mΩ
Rise Time100 ns
Threshold Voltage2 V
Turn-Off Delay Time48 ns
Turn-On Delay Time24 ns
Dimensions
Height20.57 mm
Length10.66 mm
Width4.82 mm