공급망
Export Control Classification Number (ECCN) CodeEAR99
Lifecycle StatusNRND (Last Updated: 5 months ago)
관련 부품
STMicroelectronicsSTP160N3LL
N-channel 30 V, 2.5 mOhm typ., 120 A, STripFET H6 Power MOSFET in a TO-220 package
InfineonIPP80N03S4L04AKSA1
94W(Tc) 16V 2.2V@ 45¦ÌA 75nC@ 10 V 1N 30V 3.7m¦¸@ 80A,10V 5.1nF@25V TO-220-3 10mm*4.4mm*15.65mm
InfineonIRFB7540PBF
60V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS
STMicroelectronicsSTP100N8F6
N-channel 80 V, 0.008 Ohm typ., 100 A, STripFET F6 Power MOSFET in a TO-220 package
설명
유통업체에서 제공한 Infineon IRLB8314PBF에 대한 설명입니다.
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Trans MOSFET N-CH 30V 171A 3-Pin(3+Tab) TO-220AB Tube
TUBE / MOSFET, 30V, 184A, 2.4 mOhm, 44 nC Qg, TO-220
MOSFET, N-CHANNEL, 30V, 171A, TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 130A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0019ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs:
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)130 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance3.2 mΩ
Drain to Source Voltage (Vdss)30 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.05 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation125 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance2.4 mΩ
Package Quantity1000
Power Dissipation125 W
Rds On Max2.4 mΩ
Schedule B8541290080
Threshold Voltage1.7 V
Turn-Off Delay Time32 ns
Turn-On Delay Time19 ns
Dimensions
Height20.56 mm