Infineon IRF2903ZPBF

Name: Infineon IRF2903ZPBF
Brand: Infineon
SKU: IRF2903ZPBF

Mosfet, Power; N-ch; Vdss 30V; Rds(on) 2.4MILLIOHMS; Id 260A; TO-220AB; Pd 290W; -55DE

$ 1.61

Obsolete

제조업체 페이지 데이터시트

가격 및 재고

공인 유통업체

비공인 재고 유통업체

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모든 가격 할인 보기

Distributor	SKU		Min	Pkg
Rochester Electronics	IRF2903ZPBF	200					1.410	1.260	1.180	9h
RS (Formerly Allied Electronics)	IRF2903ZPBF	0	350	Bulk				3.390	3.390	1d
Farnell	IRF2903ZPBF	0	1		3.970*	3.970*	2.162*	1.903*	1.903*	1d
Mouser	942-IRF2903ZPBF	64	1	Tube	4.150	2.720	2.040	1.610	1.610
Component Stockers USA	IRF2903ZPBF	4,367			1.570	1.570	1.490	1.200	1.450	23h

재고 내역

3개월 추세: +0.00%

CAD 모델

심볼, 풋프린트 및 3D STEP 다운로드

대체 부품

1개의 부품을 구매할 수 있습니다

데이터시트 및 문서

Infineon IRF2903ZPBF에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

IHS

Datasheet10 페이지15년 전

Datasheet9 페이지15년 전

Datasheet13 페이지20년 전

Datasheet12 페이지15년 전

element14 APAC

iiiC

RS (Formerly Allied Electronics)

재고 내역

3개월간의 트렌드:

+0.00%

대체 부품

이 부품

대체 부품

InfineonIRF2903ZPBF

InfineonAUIRF2903Z

Price @ 1000

$ 1.61

$ 1.62

Stock

168,016

65,129

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220AB

Drain to Source Voltage (Vdss)

30 V

Continuous Drain Current (ID)

75 A

160 A

Threshold Voltage

4 V

2 V

Rds On Max

2.4 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

290 W

Input Capacitance

6.32 nF

공급망

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2005-06-30

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2008-03-13

LTD Date2008-09-13

설명

유통업체에서 제공한 Infineon IRF2903ZPBF에 대한 설명입니다.

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.4Milliohms;ID 260A;TO-220AB;PD 290W;-55de

RS (Formerly Allied Electronics)

30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

IRF2903 Series 30V 75A 290W 2.4mOhm Single N-Channel MOSFET TO220AB

Future Electronics

Trans MOSFET N-CH 30V 260A 3-Pin (3+Tab) TO-220AB

Verical

HEXFET POWER MOSFET Power Field-Effect Transistor, 75A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

Mosfet IC; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:75A; On Resistance, Rds(on):2.4mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:3-TO-220; No. of Pins:3 ;RoHS Compliant: Yes

Newark

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon