onsemi FDA20N50
$ 2.779
Obsolete
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-02-06
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2010-09-23
LTD Date2011-03-23
설명
유통업체에서 제공한 onsemi FDA20N50에 대한 설명입니다.
Power Field-Effect Transistor, 22A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 500V 22A TO-3P
MOSFETs 500V, NCH MOSFET
MOSFET, N, TO-3P; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:500V; Current, Id Cont:22A; Resistance, Rds On:0.23ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-3P; Termination Type:Through Hole; Current, Idm Pulse:88A; Power, Pd:280W; Voltage, Vds Max:500V
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)22 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance230 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time105 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance3.12 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation250 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation388 W
Rds On Max230 mΩ
Rise Time375 ns
Turn-Off Delay Time100 ns
Turn-On Delay Time45 ns
Dimensions
Height23.8 mm