onsemi FQA24N50

Power MOSFET, N-Channel, QFET®, 500 V, 24 A, 200 mΩ, TO-3P

Trans MOSFET N-CH 500V 24A 3-Pin(3+Tab) TO-3P(N) Rail

N-Channel 500 V 0.2 O 120 nC Flange Mount Mosfet - TO-3PN

Power Field-Effect Transistor, 24A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Qf 500V 200Mohm To3Pn Rohs Compliant: Yes

24A, 500V, 0.2OHM, N-CHANNEL, M

3LD PLAS EXPOSED HEAT SINK <AZ

MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:500V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:24A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:TO-3P; Power Dissipation Pd:290W; Power Dissipation Pd:290W; Pulse Current Idm:96A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.