대체 부품
이 부품
대체 부품
Price @ 1000
$ 1.29
Stock
202,622
1,153,070
Authorized Distributors
0
2
Mount
Through Hole
Through Hole
Case/Package
TO-220
TO-220
Drain to Source Voltage (Vdss)
400 V
400 V
Continuous Drain Current (ID)
24 A
26 A
Threshold Voltage
-
-
Rds On Max
175 mΩ
160 mΩ
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
227 W
265 W
Input Capacitance
3.02 nF
3.185 nF
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-12-29
Lifecycle StatusEOL (Last Updated: 6 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 6 days ago)
관련 부품
설명
유통업체에서 제공한 onsemi FDP24N40에 대한 설명입니다.
N-Channel Power MOSFET, UniFETTM, 400V, 24A, 175mΩ, TO-220
N-Channel 400 V 175 mOhm Flange Mount Mosfet - TO-220
Trans MOSFET N-CH 400V 24A 3-Pin(3+Tab) TO-220 Rail
Power Field-Effect Transistor, 24A I(D), 400V, 0.175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)24 A
Drain to Source Breakdown Voltage400 V
Drain to Source Resistance175 mΩ
Drain to Source Voltage (Vdss)400 V
Element ConfigurationSingle
Fall Time65 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance3.02 nF
Max Operating Temperature150 °C
Max Power Dissipation227 W
Min Breakdown Voltage400 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation227 W
Rds On Max175 mΩ
Resistance175 MΩ
Rise Time90 ns
Schedule B8541290080
Turn-Off Delay Time110 ns
Turn-On Delay Time40 ns
Dimensions
Height15.38 mm
Length10.1 mm
Width4.7 mm