공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-12-21
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2008-12-02
LTD Date2009-06-02
관련 부품
STMicroelectronicsSTW20NM50FD
N-Channel 500V - 0.22Ohm - 20A - TO-247 FDmesh(TM) POWER MOSFET (with FAST DIODE)
STMicroelectronicsSTW20NK50Z
N-channel 500 V, 0.23 Ohm, 17 A SuperMESH(TM) Power MOSFET Zener-protected TO-247
STMicroelectronicsSTW15NK50Z
N-Channel 500V - 0.30 Ohm - 14A - TO-247 Zener-Protected SuperMESH(TM) POWER MOSFET
InfineonIPW65R190CFDAFKSA1
MOSFET N-CH 650V 17.5A TO247-3 / N-Channel 650 V 17.5A (Tc) 151W (Tc) Through Hole PG-TO247-3
InfineonIPW50R199CPFKSA1
Mosfet Transistor, N Channel, 17 A, 550 V, 199 Mohm, 10 V, 3 V Rohs Compliant: Yes
설명
유통업체에서 제공한 onsemi FQH18N50V2에 대한 설명입니다.
MOSFET N-CH 500V 20A TO-247
Power Field-Effect Transistor, 20A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN
MOSFET, N TO-247MOSFET, N TO-247; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:500V; Case style:TO-247; Current, Id cont:20A; Current, Idm pulse:80A; Power, Pd:277W; Resistance, Rds on:0.225R; Case style, RoHS Compliant: Yes
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-247
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)20 A
Current Rating20 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance265 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time110 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance3.29 nF
Max Operating Temperature150 °C
Max Power Dissipation277 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation277 W
Rds On Max265 mΩ
Rise Time150 ns
Turn-Off Delay Time95 ns
Voltage Rating (DC)500 V