대체 부품
Price @ 1000
$ 0.668
$ 0.644
Stock
2,718,863
400,630
Authorized Distributors
6
4
Mount
Surface Mount
Surface Mount
Case/Package
SO
SOIC
Drain to Source Voltage (Vds)
30 V
30 V
Continuous Drain Current (ID)
4.6 A
4.6 A
Threshold Voltage
2 V
-
Rds On Max
25 mΩ
25 mΩ
Gate to Source Voltage (Vgs)
20 V
-
Power Dissipation
1.5 W
-
Input Capacitance
590 pF
590 pF
관련 부품
Diodes Inc.ZXMC3F31DN8TA
Dual N/P-Channel 30 V 2.1 W 12.9/12.7 nC Silicon Surface Mount Mosfet - SOIC-8
Diodes Inc.DMC3025LSD-13
Dual N/P-Channel 30 V 32/85 mOhm 4.6/5.1 nC 1.2 W Silicon SMT Mosfet SOIC-8
InfineonIRF7379TRPBF
IRF7379 Series 30 V 0.045 Ohm N and P-Channel HEXFET® Power MOSFET - SOIC-8
InfineonIRF7316GTRPBF
2KW 20V 1V@250µA 34nC@10V 2 P-Ch MOSFET 30V 58mΩ@4.9A,10V 4.9A 710pF@25V SOIC-8 SMD 1.5mm H
InfineonIRF7303QTRPBF
Power Field-Effect Transistor, 4.9A I(D), N-Channel, Metal-oxide Semiconductor FET
설명
유통업체에서 제공한 Diodes Inc. DMHC3025LSD-13에 대한 설명입니다.
Dual N/P Channel 30 V 25 mO 11.7 nC H-Bridge Power Mosfet - SOIC-8
DiodesZetex N/P Channel MOSFET, Vds=30 V, 2.5 A, 7.8 A, SOIC, SMD, 8-Pin
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 6 A, 6 A, 0.019 ohm
Power Field-Effect Transistor, 4.6A I(D), 30V, 0.025ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageSO
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight73.992255 mg
Technical
Continuous Drain Current (ID)4.6 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance25 mΩ
Drain to Source Voltage (Vds)30 V
Fall Time13.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance590 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels4
Number of Elements4
Power Dissipation1.5 W
Rds On Max25 mΩ
Rise Time4.9 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time28.2 ns
Turn-On Delay Time7.5 ns
Dimensions
Height1.7 mm
Length4.95 mm
Width3.95 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
RatingsAEC-Q101
REACH SVHCUnaffected
RoHSCompliant
규정 준수 정책