Infineon IRF7316GTRPBF
$ 0.539
가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | IRF7316GTRPBFCT-ND | 1,852 | 1 | Cut Tape | ||||||||
| RS (Formerly Allied Electronics) | IRF7316GTRPBF | 0 | 4K | Bulk | 9h | |||||||
| Win Source | WS-IRF7316GTRPBF | 2,010 | 80 | 17h | ||||||||
| Worldway Electronics | IRF7316GTRPBF | 12,014 | 7 | Tape & Reel | 16h | |||||||
| Esaler Electronic | IRF7316GTRPBF | 4,000 | 1d |
관련 부품
InfineonIRF7303QTRPBF
Power Field-Effect Transistor, 4.9A I(D), N-Channel, Metal-oxide Semiconductor FET
InfineonIRF7406TRPBF
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.045Ohm;ID -5.8A;SO-8;PD 2.5W;VGS +/-20V
InfineonIRF7379TRPBF
IRF7379 Series 30 V 0.045 Ohm N and P-Channel HEXFET® Power MOSFET - SOIC-8
STMicroelectronicsSTS4DNFS30
2W(Tc) 20V 1V@ 250¦ÌA 4.7nC@ 5 V 1N 30V 55m¦¸@ 2A,10V 4.5A 330pF@25V SOIC-8
InfineonIRF7603TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.035Ohm;ID 5.6A;SO-8;PD 1.8W;VGS +/-20V;-55
설명
유통업체에서 제공한 Infineon IRF7316GTRPBF에 대한 설명입니다.
MOSFET 2P-CH 30V 4.9A 8SOIC / Trans MOSFET P-CH 30V 4.9A 8-Pin SOIC T/R
2KW 20V 1V@ 250¦ÌA 34nC@ 10V 2P 30V 58m¦¸@ 4.9A,10V 4.9A 710pF@25V SOIC-8 1.5mm
DUAL P CH MOSFET, -30V, SOIC-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.9A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):42mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1V ;RoHS Compliant: Yes
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)-4.9 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance42 mΩ
Drain to Source Voltage (Vdss)-30 V
Element ConfigurationDual
Fall Time48 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance710 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Operating Temperature-55 °C
Number of Channels2
PackagingTape & Reel
Power Dissipation2 W
Rds On Max58 mΩ
Rise Time20 ns
Turn-Off Delay Time34 ns
Turn-On Delay Time13 ns
Dimensions
Height1.75 mm
Length4.9784 mm
Width3.9878 mm