공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusEOL (Last Updated: 2 months ago)
LTB Date2026-10-03
관련 부품
설명
유통업체에서 제공한 STMicroelectronics STS2DNF30L에 대한 설명입니다.
N-Channel 30V - 0.09 Ohm - 3A - SO-8 STripFET(TM) II POWER MOSFET
Dual N-Channel 30 V 110 mOhm SMT StripFET Power Mosfet - SOIC-8
Transistor MOSFET Array Dual N-CH 30V 3A 8-Pin SOIC T/R
Trans MOSFET N-CH 30V 3A 8-Pin SO N T/R / MOSFET 2N-CH 30V 3A 8SOIC
MOSFET, NN CH, 30V, 3A, 8-SOIC; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.09ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 1.6W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Continuous Drain Current Id, N Channel: 3A; Current Id Max: 3A; Drain Source Voltage Vds, N Channel: 30V; Module Configuration: Dual; On Resistance Rds(on), N Channel: 0.09ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 30V; Voltage Vgs Max: 18V; Voltage Vgs Rds on Measurement: 10V
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight4.535924 g
Technical
Continuous Drain Current (ID)3 A
Current Rating3 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance150 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time8 ns
Gate to Source Voltage (Vgs)18 V
Input Capacitance121 pF
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements2
PackagingTape and Reel
Power Dissipation1.6 W
Rds On Max110 mΩ
Rise Time20 ns
Schedule B8541290080
Threshold Voltage1.7 V
Turn-Off Delay Time12 ns
Turn-On Delay Time19 ns
Voltage Rating (DC)30 V
Dimensions
Height6.35 mm
Length50.8 mm
Width6.35 mm