価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | HUF75345S3STCT-ND | 1,881 | 1 | Cut Tape | ||||||||
| Newark | HUF75345S3ST | 0 | 1 | Cut Tape | ||||||||
| Onlinecomponents.com | HUF75345S3ST | 0 | 200 | Bulk | ||||||||
| Future Electronics | HUF75345S3ST | 0 | 800 | Tape & Reel | ||||||||
| Master Electronics | HUF75345S3ST | 0 | 200 |
CADモデル
製造元 onsemi HUF75345S3ST のシンボル、フットプリント、3D STEPモデルを信頼できるパートナーからダウンロードする
| ソース | eCAD | mCAD | ファイル |
|---|---|---|---|
 SnapEDA | フットプリント | ダウンロード |
CADモデルをダウンロードする際に、パートナーサイトが新しいタブで開きます。
OctopartからCADモデルをダウンロードすることにより、お客様は弊社の利用規約とプライバシーポリシーに同意したものとみなされます。
代替部品
Price @ 1000
$ 3.462
$ 1.53
Stock
97,913
19,489
Authorized Distributors
6
1
Mount
Surface Mount
-
Case/Package
TO-263-3
D2PAK
Drain to Source Voltage (Vdss)
55 V
55 V
Continuous Drain Current (ID)
75 A
75 A
Threshold Voltage
-
-
Rds On Max
7 mΩ
-
Gate to Source Voltage (Vgs)
20 V
-
Power Dissipation
325 W
-
Input Capacitance
4 nF
-
サプライチェーン
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-03-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
説明
onsemi HUF75345S3STの詳細は販売業者から提供されます。
TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,75A I(D),TO-263AB
N-Channel 55 V 0.007 Ohm Surface Mount UltraFET Power Mosfet - TO-263AB
N-Channel UltraFET Power MOSFET 55V, 75A, 7mΩ
325W(Tc) 20V 4V@ 250¦ÌA 275nC@ 20 V 1N 55V 7m¦¸@ 75A,10V 75A 4nF@25V D2PAK,TO-263 5.08mm
Trans MOSFET N-CH 55V 75A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 75A I(D), 55V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)75 A
Current Rating75 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance7 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time26 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation325 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation325 W
Rds On Max7 mΩ
Resistance7 mΩ
Rise Time118 ns
Schedule B8541290080
Turn-Off Delay Time42 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)55 V
Dimensions
Height5.08 mm