関連部品
InfineonIPB050N06NGATMA1
MOSFET N-CH 60V 100A D2PAK N-Channel 60 V 100A (Tc) 300W (Tc) Surface Mount PG-TO263-3
InfineonIPB80N06S405ATMA2
60V, N-Ch, 5.4 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
InfineonIPB80N06S407ATMA2
60V, N-Ch, 7.1 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
説明
Infineon IPB065N06LGの詳細は販売業者から提供されます。
MOSFET N-CH 60V 80A TO263-3 N-Channel 60 V 80A (Tc) 250W (Tc) Surface Mount PG-TO263-3-2
Trans MOSFET N-CH 60V 80A 3-Pin(2+Tab) TO-263
IPB065N06 OPTLMOS N-CHANNEL POWER MOSFET;
250W(Tc) 20V 2V@180µA 157nC@10V N-Ch 60V 6.2mΩ@80A,10V 80A 5.1nF@30V TO-263 SMD 10mm × 9.25mm × 4.4mm
Power Field-Effect Transistor, 80A I(D), 60V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)80 A
Current Rating80 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance6.2 mΩ
Drain to Source Voltage (Vds)60 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.1 nF
Max Operating Temperature175 °C
Max Power Dissipation250 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation250 W
Rds On Max6.2 mΩ
Rise Time21 ns
Turn-Off Delay Time60 ns
Voltage Rating (DC)60 V