onsemi HGTG30N60B3

Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Rail
Obsolete
メーカーページデータシート

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すべての値下げ情報を見る
DistributorSKUMinPkg
Microchip USAHGTG30N60B3140150Tube
10h
Win SourceWS-HGTG30N60B334,00014
18h
Fmall Co., LimitedHGTG30N60B338,760
>1wk
AnlinkdaHGTG30N60B319,825
1d
LixincHGTG30N60B319,383
2d

データシート & ドキュメント

onsemi HGTG30N60B3のデータシートとメーカー資料をダウンロードする。

Future Electronics

Datasheet10ページ6年前

IHS

onsemi

element14

Farnell

代替部品

部品
代替部品
onsemiHGTG30N60B3
onsemiHGTG30N60B3_NL
Price @ 1000
$ 4.67
Stock
217,370
102
Authorized Distributors
0
1
Mount
Through Hole
-
Case/Package
TO-247
TO-247
Collector Emitter Breakdown Voltage
600 V
-
Max Collector Current
60 A
60 A
Power Dissipation
208 W
-
Collector Emitter Saturation Voltage
1.45 V
-
Reverse Recovery Time
-
-

サプライチェーン

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1995-07-01
Lifecycle StatusObsolete (Last Updated: 4 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 4 days ago)

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説明

onsemi HGTG30N60B3の詳細は販売業者から提供されます。

Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Rail
Avnet
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247
IHS
IGBT Transistors 600V N-Channel IGBT UFS Series
Future Electronics
IGBT UFS N-CHAN 600V 60A TO-247
DigiKey
FAIRCHILD SEMICONDUCTOR HGTG30N60B3IGBT Single Transistor, 60 A, 1.45 V, 208 W, 600 V, TO-247, 3 Pins
Utmel Electronic
Ptpigbt To247 30A 600V Rohs Compliant: Yes
Newark
60 A 600 V N-CHANNEL IGBT TO-247
Component Stockers USA
TRANSISTOR, IGBT; Transistor Type:IGBT; DC Collector Current:60A; Collector Emitter Voltage Vces:1.45V; Power Dissipation Pd:208W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:60A; Package / Case:TO-247; Power Dissipation Max:208W; Power Dissipation Pd:208W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.45V
element14 APAC
The HGTG30N60B3 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter and power supplies.
Fairchild Semiconductor

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Newark
Newark
Rochester Electronics
iiiC
UTSource
Farnell
RS

メーカーの別名

onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

部品番号の別名

こちらの部品は、以下の代替部品番号で知られている場合があります：

  • HGTG30N60B3.