価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IPD65R380E6ATMA1 | 15,000 | 2500 | 18h | ||||||||
| Newark | IPD65R380E6ATMA1 | 1,077 | 1 | Cut Tape | ||||||||
| Rochester Electronics | IPD65R380E6ATMA1 | 1,842 | 15h | |||||||||
| DigiKey | 448-IPD65R380E6ATMA1CT-ND | 4,442 | 1 | Cut Tape | ||||||||
| Arrow Electronics | IPD65R380E6ATMA1 | 0 | 2500 |
CADモデル
製造元 Infineon IPD65R380E6ATMA1 のシンボル、フットプリント、3D STEPモデルを信頼できるパートナーからダウンロードする
| ソース | eCAD | mCAD | ファイル |
|---|---|---|---|
 EE Concierge | シンボルフットプリント |
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代替部品
Price @ 1000
$ 0.79
$ 0.782
Stock
327,872
432,372
Authorized Distributors
6
1
Mount
Surface Mount
-
Case/Package
TO-252-3
-
Drain to Source Voltage (Vdss)
650 V
650 V
Continuous Drain Current (ID)
10.6 A
10.6 A
Threshold Voltage
-
-
Rds On Max
380 mΩ
-
Gate to Source Voltage (Vgs)
20 V
-
Power Dissipation
83 W
83 W
Input Capacitance
710 pF
-
サプライチェーン
Country of OriginMainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-06-08
Lifecycle StatusNRND (Last Updated: 1 month ago)
関連部品
STMicroelectronicsSTD16N50M2
N-channel 500 V, 0.24 Ohm typ., 13 A MDmesh M2 Power MOSFET in a DPAK package
STMicroelectronicsSTD16N65M2
N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in DPAK package
InfineonIPD65R420CFDBTMA1
83.3W(Tc) 20V 4.5V@ 340¦ÌA 32nC@ 10 V 1N 650V 420m¦¸@ 3.4A,10V 8.7A 870pF@100V TO-252
InfineonIPD60R380C6ATMA1
83W 20V 3.5V 32nC@ 10V 1N 600V 380m¦¸@ 10V 10.6A 700pF@ 100V TO-252 , 6.5mm*6.22mm*2.3mm
STMicroelectronicsSTD11NM65N
N-channel 650 V, 0.425 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in DPAK package
説明
Infineon IPD65R380E6ATMA1の詳細は販売業者から提供されます。
Power MOSFET, N Channel, 650 V, 10.6 A, 0.34 ohm, TO-252 (DPAK), Surface Mount
Power Field-Effect Transistor, 10.6A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS
Infineon SCT
Mosfet, N-Ch, 650V, 10.6A, To-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:10.6A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.34Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon Technologies IPD65R380E6ATMA1
CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler.600V CoolMOS™ E6 is replacement for 600V CoolMOS™ C3650V CoolMOS™ E6 is replacement for 650V CoolMOS™ C3
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)10.6 A
Drain to Source Resistance380 mΩ
Drain to Source Voltage (Vdss)650 V
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance710 pF
Max Dual Supply Voltage650 V
Max Operating Temperature150 °C
Max Power Dissipation83 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance380 mΩ
Package Quantity2500
PackagingTape & Reel
Power Dissipation83 W
Rds On Max380 mΩ
Rise Time7 ns
Turn-Off Delay Time57 ns
Turn-On Delay Time10 ns