Infineon IPD60R380C6ATMA1

83W 20V 3.5V 32nC@ 10V 1N 600V 380m¦¸@ 10V 10.6A 700pF@ 100V TO-252 , 6.5mm*6.22mm*2.3mm

Power Field-Effect Transistor, 10.6A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS

MOSFET,N CH,600V,10.6A,TO252; Transistor Polarity:N Channel; Continuous Drain Current Id:10.6A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.34ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:10.6A; Power Dissipation Pd:83W; Voltage Vgs Max:30V

CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler.600V CoolMOS™ C6 is replacement for 600V CoolMOS™ C3650V CoolMOS™ C6 is replacement for 650V CoolMOS™ C3