Vishay SIA415DJ-T1-GE3
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Component Stockers USA | SIA415DJ-T1-GE3 | 405 | >1wk | |||||||||
| Win Source | WS-SIA415DJ-T1-GE3 | 390 | 80 | 17h | ||||||||
| Chipsmall Limited | SIA415DJ-T1-GE3 | 300.000 | 1 | 15h | ||||||||
| ALLICDATA ELECTRONICS | SIA415DJ-T1-GE3 | 9000 | Tape & Reel | 15h | ||||||||
| Run Hong Electronics | SIA415DJ-T1-GE3 | 8514 | 4h |
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Vishay SIA415DJ-T1-GE3.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-03-13
Lifecycle StatusObsolete (Last Updated: 4 months ago)
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Descrizioni
Descrizioni di Vishay SIA415DJ-T1-GE3 fornite dai suoi distributori.
SiA415DJ Series P-Channel 20 V 0.035 Ohms SMT Power Mosfet - PowerPAK SC-70-6L
Trans MOSFET P-CH 20V 8.4A 6-Pin PowerPAK SC-70 T/R
20V 12A 3.5W 35m´Î@4.5V5.6A 1.5V@250Ã×A P Channel PowerPAK SC-70-6 MOSFETs ROHS
Power Field-Effect Transistor, 8.4A I(D), 20V, 0.035ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET 20V 12A 19W 35mohm @ 4.5V
P-CHANNEL-FET12 A 20V PP-SC70-6 RoHSconf
MOSFET P-CH 20V 12A PPAK SC70-6
P CHANNEL MOSFET, -20V, 12A, SC-70; Tran; P CHANNEL MOSFET, -20V, 12A, SC-70; Transistor Polarity:P Channel; Continuous Drain Current Id:-12A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):51mohm; Rds(on) Test Voltage Vgs:12V; Threshold Voltage Vgs Typ:-1.5V
Alias del produttore
Vishay ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Vishay può anche essere conosciuto con i seguenti nomi:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Specifiche tecniche
Physical
Case/PackageSC
MountSurface Mount
Number of Pins6
Number of Terminals3
Technical
Continuous Drain Current (ID)8.4 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance35 mΩ
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance1.25 nF
Max Operating Temperature150 °C
Max Power Dissipation19 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs-1.5 V
Number of Channels1
Number of Elements1
Power Dissipation3.5 W
Rds On Max35 mΩ
Resistance35 mΩ
Rise Time50 ns
Schedule B8541290080
Threshold Voltage-1.5 V
Turn-Off Delay Time45 ns
Turn-On Delay Time25 ns
Dimensions
Height750 µm
Length2.05 mm
Width2.05 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Vishay SIA415DJ-T1-GE3.
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità