Vishay SIA430DJ-T1-GE3
Obsolete
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Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Vishay SIA430DJ-T1-GE3.
Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 0.241
Stock
165,128
653,913
Authorized Distributors
0
6
Mount
Surface Mount
-
Case/Package
SC
-
Drain to Source Voltage (Vdss)
20 V
-
Continuous Drain Current (ID)
12 A
12 A
Threshold Voltage
3 V
-
Rds On Max
13.5 mΩ
-
Gate to Source Voltage (Vgs)
20 V
-
Power Dissipation
3.5 W
-
Input Capacitance
800 pF
-
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-07-29
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2019-02-26
LTD Date2019-08-26
Parti correlate
VishaySIA415DJ-T1-GE3
SiA415DJ Series P-Channel 20 V 0.035 Ohms SMT Power Mosfet - PowerPAK SC-70-6L
VishaySIA426DJ-T1-GE3
N-Channel 20 V 23.6 mO 27 nC SMT TrenchFET Power Mosfet - PowerPAK SC-70-6L
Descrizioni
Descrizioni di Vishay SIA430DJ-T1-GE3 fornite dai suoi distributori.
Single N-Channel 20 V 0.0135 Ohm SMT TrenchFET Power Mosfet - PowerPAK SC-70-6L
Trans MOSFET N-CH 20V 12A 6-Pin PowerPAK SC-70 T/R
20V 12A 13.5m´Î@10V7A 19.2W 3V@250Ã×A N Channel PowerPAK SC-70-6 MOSFETs ROHS
Power Field-Effect Transistor, 12A I(D), 20V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 20V 12A PPAK SC70-6
N-CHANNEL-FET 12A 20V PP-SC70-6 RoHSconf
N CHANNEL MOSFET, 20V, 12A, SC-70; Trans; N CHANNEL MOSFET, 20V, 12A, SC-70; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:20V; On Resistance Rds(on):18.5mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:3V; No. of Pins:6
Alias del produttore
Vishay ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Vishay può anche essere conosciuto con i seguenti nomi:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Specifiche tecniche
Physical
Case/PackageSC
MountSurface Mount
Number of Pins6
Number of Terminals3
Technical
Continuous Drain Current (ID)12 A
Drain to Source Resistance13.5 mΩ
Drain to Source Voltage (Vdss)20 V
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance800 pF
Max Operating Temperature150 °C
Max Power Dissipation19.2 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels1
Number of Elements1
Power Dissipation3.5 W
Rds On Max13.5 mΩ
Resistance13.5 mΩ
Rise Time8 ns
Threshold Voltage3 V
Turn-Off Delay Time17 ns
Turn-On Delay Time10 ns
Dimensions
Height750 µm
Length2.05 mm
Width2.05 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Vishay SIA430DJ-T1-GE3.
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità