Vishay SI4100DY-T1-GE3
$ 0.571
Production
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | SI4100DY-T1-GE3 | 1596 | 1 | Cut Tape | ||||||||
| Arrow Electronics | SI4100DY-T1-GE3 | 207 | 1 | |||||||||
| Verical | SI4100DY-T1-GE3 | 207 | 12 | |||||||||
| Future Electronics | SI4100DY-T1-GE3 | 5000 | 2500 | Tape & Reel | ||||||||
| DigiKey | SI4100DY-T1-GE3CT-ND | 4835 | 1 | Cut Tape |
Cronologia dell'inventario
Tendenza a 3 mesi: +51.67%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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0 parti disponibili
Supply Chain
Country of OriginIsrael
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-09-25
Lifecycle StatusProduction (Last Updated: 4 months ago)
Parti correlate
Diodes Inc.ZXMC4559DN8TA
ZXMC4559DN8 Series 60 V 0.55 Ohm Dual N/P-Channel Enhancement Mode MOSFET SOIC-8
Descrizioni
Descrizioni di Vishay SI4100DY-T1-GE3 fornite dai suoi distributori.
SI4100DY-T1-GE3 N-CHANNEL MOSFET TRANSISTOR, 6.8 A, 100 V, 8-PIN SOIC
2.5W(Ta),6W(Tc) 20V 4.5V@ 250¦ÌA 20nC@ 10 V 1N 100V 63m¦¸@ 4.4A,10V 6.8A 600pF@50V SOIC-8
Si4100DY Series 100 V 6.8 A 63 mOhm Surface Mount N-Channel MOSFET - SO-8
MOSFET, N-CH, 100V, 6.8A, SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.8A; Drain Source Voltage Vds:100V; On Resistance Rds(on):51mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.8A; Power Dissipation Pd:6W; Voltage Vgs Max:20V
Alias del produttore
Vishay ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Vishay può anche essere conosciuto con i seguenti nomi:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Cronologia dell'inventario
Tendenza a 3 mesi: +51.67%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight186.993455 mg
Technical
Continuous Drain Current (ID)6.8 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance63 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.71 nF
Max Operating Temperature150 °C
Max Power Dissipation6 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max60 mΩ
Rise Time12 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time15 ns
Turn-On Delay Time10 ns
Dimensions
Height1.55 mm
Length5 mm
Width4 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità