Diodes Inc. ZXMN6A25N8TA
$ 0.492
Production
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TME | ZXMN6A25N8TA | 0 | 500 | 2h | ||||||||
| Future Electronics | ZXMN6A25N8TA | 0 | 500 | Tape & Reel | ||||||||
| Avnet | ZXMN6A25N8TA | 0 | 500 | 6h | ||||||||
| Component Stockers USA | ZXMN6A25N8TA | 9270 | 2d | |||||||||
| Win Source | WS-ZXMN6A25N8TA | 90.050 | 120 | 5h |
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-05-08
Lifecycle StatusProduction (Last Updated: 5 months ago)
Parti correlate
VishaySI4946BEY-T1-GE3
SI4946BEY-T1-GE3 DUAL N-CHANNEL MOSFET TRANSISTOR, 6.5 A, 60 V, 8-PIN SOIC
Diodes Inc.ZXMN6A25DN8TA
ZXMN6A25 Series 60 V 0.5 Ohm Dual N-Channel Enhancement Mode MOSFET - SOIC-8
Diodes Inc.ZXMC4559DN8TA
ZXMC4559DN8 Series 60 V 0.55 Ohm Dual N/P-Channel Enhancement Mode MOSFET SOIC-8
Descrizioni
Descrizioni di Diodes Inc. ZXMN6A25N8TA fornite dai suoi distributori.
N-Channel 60 V 0.05 Ohm Power MOSFET Surface Mount - SOIC-8
Trans MOSFET N-CH 60V 5.7A 8-Pin SOIC T/R
60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
Diodes Inc SCT
Power Field-Effect Transistor, 4.3A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Alias del produttore
Diodes Inc. ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Diodes Inc. può anche essere conosciuto con i seguenti nomi:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Specifiche tecniche
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight73.992255 mg
Technical
Continuous Drain Current (ID)4.3 A
Drain to Source Resistance50 mΩ
Drain to Source Voltage (Vdss)60 V
Fall Time10.6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.063 nF
Max Operating Temperature150 °C
Max Power Dissipation4.14 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.8 W
Rds On Max50 mΩ
Resistance50 mΩ
Rise Time4 ns
Turn-Off Delay Time26.2 ns
Turn-On Delay Time3.8 ns
Dimensions
Height1.5 mm
Length5 mm
Width4 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità