onsemi FDS4559
$ 0.422
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Cronologia dell'inventario
Tendenza a 3 mesi: +31.05%
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-09-27
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
InfineonIRF7341PBF
Transistor: 2xN-MOSFET; unipolar; 55V; 4.7A; 0.05ohm; 2W; -55+150 deg.C; SMD; SO8
Diodes Inc.ZXMC4559DN8TA
ZXMC4559DN8 Series 60 V 0.55 Ohm Dual N/P-Channel Enhancement Mode MOSFET SOIC-8
Descrizioni
Descrizioni di onsemi FDS4559 fornite dai suoi distributori.
MOSFET N/P-CH 60V 4.5A/3.5A 8-SO / Trans MOSFET N/P-CH 60V 4.5A/3.5A 8-Pin SOIC T/R
N/P-Channel 60 V 55/105 mO Complementary PowerTrench Mosfet - SOIC-8
Dual MOSFET, Complementary N and P Channel, 60 V, 60 V, 4.5 A, 4.5 A, 0.055 ohm
ON SEMICONDUCTOR - FDS4559 - DUAL N/P CHANNEL MOSFET, 60V, SOIC
Power Field-Effect Transistor, 4.5A I(D), 60V, 0.055ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, DUAL, NP, SMD, SO-8; Transistor Polarity:N and P Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.2V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:4.5A; Current Id Max:4.5A; Drain Source Voltage Vds:60V; Module Configuration:Dual; On Resistance Rds(on):55mohm; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Rds on Measurement:10V
This complementary MOSFET device is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +31.05%
Modelli CAD
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Specifiche tecniche
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight187 mg
Technical
Continuous Drain Current (ID)4.5 A
Current Rating4.5 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance55 mΩ
Drain to Source Voltage (Vdss)60 V
Dual Supply Voltage60 V
Element ConfigurationDual
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance650 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation2 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs2.2 V
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation2 W
Rds On Max55 mΩ
Resistance55 MΩ
Rise Time10 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage2.2 V
Turn-Off Delay Time19 ns
Dimensions
Height1.75 mm
Length5 mm
Width4 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità