Vishay SI2308BDS-T1-GE3
$ 0.245
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: -49.29%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Modelli CAD
Scarica il simbolo Vishay SI2308BDS-T1-GE3, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 Component Search Engine | SimboloImpronta | 3D | Scarica |
 EE Concierge | SimboloImpronta | ||
 Ultra Librarian | SimboloImpronta | Scarica |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 0.245
$ 0.247
Stock
1,663,471
583,060
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23-3
SOT-23-3
Drain to Source Voltage (Vdss)
60 V
60 V
Continuous Drain Current (ID)
1.9 A
1.9 A
Threshold Voltage
3 V
1 V
Rds On Max
156 mΩ
54 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
1.09 W
1.09 W
Input Capacitance
190 pF
190 pF
Supply Chain
Country of OriginIsrael
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-03-13
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2025-01-21
LTD Date2025-07-21
Parti correlate
Diodes Inc.ZXMN6A07FTA
ZXMN6A07F Series 60 V 0.25 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-3
Diodes Inc.ZXMP6A17E6TA
ZXMP6A17 Series 60 V 0.125 Ohm P-Channel Enhancement Mode MOSFET - SOT-23-6
Descrizioni
Descrizioni di Vishay SI2308BDS-T1-GE3 fornite dai suoi distributori.
VISHAY - SI2308BDS-T1-GE3 - MOSFET Transistor, N Channel, 2.3 A, 60 V, 0.13 ohm, 20 V, 3 V
SI2308BDS Series N-Channel 60 V 0.156 Ohm Power MosFet Surface Mount - SOT-23
MOSFET, N-CH, VDS 60V, VGS +/- 20V, RDS(ON) 192MOHM, ID 2.3A, SOT-23, PD 1.66W
N-Channel 60 V (D-S) MOSFET Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
TRANSISTOR 1900 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, ROHS COMPLIANT, TO-236, 3 PIN, FET General Purpose Small Signal
MOSFET,N CH,60V,2.3A,SOT23-3; Transistor Polarity:N Channel; Max Current Id:1.9A; Max Voltage Vds:60V; On State Resistance:130mohm; Rds Measurement Voltage:10V; Max Voltage Vgs:20V; Power Dissipation:1.09W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3
Alias del produttore
Vishay ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Vishay può anche essere conosciuto con i seguenti nomi:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Cronologia dell'inventario
Tendenza a 3 mesi: -49.29%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOT-23-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight1.437803 g
Technical
Continuous Drain Current (ID)1.9 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance156 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance190 pF
Max Operating Temperature150 °C
Max Power Dissipation1.66 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels1
Number of Elements1
PackagingCut Tape (CT)
Power Dissipation1.09 W
Rds On Max156 mΩ
Resistance156 mΩ
Rise Time16 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time11 ns
Turn-On Delay Time15 ns
Dimensions
Height1.02 mm
Length3.04 mm
Width1.4 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità