onsemi 2N7002

N-Channel MOSFET, Enhancement Mode, 60V, 0.115A, 7.5Ω
$ 0.172
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Parti alternative

Questo componente
Parti alternative
Price @ 1000
$ 0.172
$ 0.057
$ 0.057
Stock
18,487,373
178,335,880
178,335,880
Authorized Distributors
6
6
6
Mount
Surface Mount
-
-
Case/Package
SOT-23
SOT-23-3
SOT-23-3
Drain to Source Voltage (Vdss)
60 V
60 V
60 V
Continuous Drain Current (ID)
115 mA
115 mA
115 mA
Threshold Voltage
2.1 V
1 V
1 V
Rds On Max
7.5 Ω
7.5 Ω
7.5 Ω
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
200 mW
225 mW
225 mW
Input Capacitance
50 pF
50 pF
50 pF

Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1989-06-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Parti correlate

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Trans MOSFET N-CH 60V 0.115A Automotive 3-Pin SOT-23 T/R
onsemiNDS7002A
Transistor: N-MOSFET; unipolar; 60V; 0.28A; 2ohm; 300mW; -65+150 deg.C; SMD; SOT23
Diodes Inc.2N7002K-7
DIODES INC. - 2N7002K-7 - MOSFET Transistor, N Channel, 300 mA, 60 V, 2 ohm, 10 V, 1.6 V
onsemiMMBF170
Power Field-Effect Transistor, 0.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
onsemi2N7002K
MOSFET N-CH 60V 300MA SOT23 / Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R

Descrizioni

Descrizioni di onsemi 2N7002 fornite dai suoi distributori.

N-Channel MOSFET, Enhancement Mode, 60V, 0.115A, 7.5Ω
N-Channel 60 V 7.5 Ohm SMT Enhancement Mode Field Effect Transistor SOT-23
Transistor MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R
Avnet Japan
Power MOSFET, N Channel, 60 V, 280 mA, 5 ohm, SOT-23, Surface Mount
MOSFET, N, 60V, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 115mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 1.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.1V; Power Dissip
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 115 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) Ohm = 7.5 / Gate-Source Voltage V = 20 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) mW = 200
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Alias del produttore

onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • 2N7002#
  • 2N7002.
  • 2N7002..