Vishay SI2308BDS-T1-E3
$ 0.212
Obsolete
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Cronologia dell'inventario
Tendenza a 3 mesi: -26.91%
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Price @ 1000
$ 0.212
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Stock
575,068
1,608,236
Authorized Distributors
6
6
Mount
Surface Mount
-
Case/Package
SOT-23-3
-
Drain to Source Voltage (Vdss)
60 V
60 V
Continuous Drain Current (ID)
1.9 A
1.9 A
Threshold Voltage
1 V
-
Rds On Max
54 mΩ
-
Gate to Source Voltage (Vgs)
20 V
-
Power Dissipation
1.09 W
1.09 W
Input Capacitance
190 pF
-
Supply Chain
Country of OriginIsrael
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-03-13
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2025-01-21
LTD Date2025-07-21
Parti correlate
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SI2309CDS Series P-Channel 60 V 0.345 Ohm Power MosFet Surface Mount - SOT-23-3
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BSS84P Series 60 V 8 Ohm P-Channel SIPMOS® Small-Signal-Transistor - SOT-23-3
onsemiNTR5105PT1G
Single P−Channel Power MOSFET -60V, -211mA, 5Ω -60 V, -211 mA, Single P-Channel SOT-23 Package
Diodes Inc.2N7002E-7-F
Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R / MOSFET N-CH 60V 0.25A SOT23-3
Descrizioni
Descrizioni di Vishay SI2308BDS-T1-E3 fornite dai suoi distributori.
Single N-Channel 60 V 156 mOhm Surface Mount Power Mosfet - SOT-23-3
Trans MOSFET N-CH 60V 2.3A 3-Pin SOT-23 T/R / MOSFET N-CH 60V 2.3A SOT23-3
Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
MOSFET, N CH, 60V, 0.13OHM, 2.3A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:2.3A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.13ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.66W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:-
Alias del produttore
Vishay ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Vishay può anche essere conosciuto con i seguenti nomi:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Cronologia dell'inventario
Tendenza a 3 mesi: -26.91%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight1.437803 g
Technical
Continuous Drain Current (ID)1.9 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance156 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance190 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.66 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation1.09 W
Rds On Max54 mΩ
Resistance156 MΩ
Rise Time16 ns
Schedule B8541290080
Threshold Voltage1 V
Turn-Off Delay Time10 ns
Turn-On Delay Time4 ns
Dimensions
Height1.12 mm
Length3.04 mm
Width1.4 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità