Vishay SI2303CDS-T1-GE3
$ 0.224
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Cronologia dell'inventario
Tendenza a 3 mesi: -1.40%
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Price @ 1000
$ 0.224
$ 0.233
Stock
3,208,830
325,044
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23
SOT-23-3
Drain to Source Voltage (Vdss)
-30 V
30 V
Continuous Drain Current (ID)
2.7 A
2.7 A
Threshold Voltage
-3 V
-
Rds On Max
190 mΩ
190 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
1 W
2.3 W
Input Capacitance
155 pF
155 pF
Supply Chain
Country of OriginUSA
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-04-17
Lifecycle StatusProduction (Last Updated: 5 months ago)
Parti correlate
Diodes Inc.ZXMN3A01FTA
ZXMN3A01 Series 30 V 0.12 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-3
Diodes Inc.ZXM61N03FTA
ZXM61N03F Series 30 V 1.4 A 220 mOhm N-Channel Enhancement Mode Mosfet-SOT-23-3
VishaySI2319DS-T1-GE3
Transistor: P-MOSFET; unipolar; -30V; -5.6A; 0.046ohm; 2.5W; -55+150 st.C; SMD; SOT23
InfineonBSS308PEH6327XTSA1
Power MOSFET, P Channel, 30 V, 2 A, 80 Milliohms, SOT-23, 3 Pins, Surface Mount
Descrizioni
Descrizioni di Vishay SI2303CDS-T1-GE3 fornite dai suoi distributori.
Transistor: P-MOSFET; unipolar; -30V; -2.7A; 0.19ohm; 2.3W; -55+150 deg.C; SMD; SOT23
Single P-Channel 30 V 0.19 Ohm Surface Mount Power MosFet - SOT-23-3
Trans MOSFET P-CH 30V 2.7A 3-Pin SOT-23 T/R
Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Mosfet, P Ch, -30V, -2.7A, Sot-23-3, Full Reel; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.7A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3Vrohs Compliant: No |Vishay SI2303CDS-T1-GE3.
Alias del produttore
Vishay ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Vishay può anche essere conosciuto con i seguenti nomi:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Cronologia dell'inventario
Tendenza a 3 mesi: -1.40%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight1.437803 g
Technical
Continuous Drain Current (ID)2.7 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance190 mΩ
Drain to Source Voltage (Vdss)-30 V
Element ConfigurationSingle
Fall Time37 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance155 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.3 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs-3 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation1 W
Rds On Max190 mΩ
Resistance190 mΩ
Rise Time37 ns
Schedule B8541290080
Threshold Voltage-3 V
Turn-Off Delay Time11 ns
Turn-On Delay Time4 ns
Dimensions
Height1.12 mm
Length3.04 mm
Width1.4 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità