onsemi FQD2N60CTM
$ 0.406
Production
Prezzo e stock
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Distributori di stock non autorizzati
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | FQD2N60CTM | 203 | 1h | |||||||||
| DigiKey | FQD2N60CTMCT-ND | 2344 | 1 | Cut Tape | ||||||||
| Onlinecomponents.com | FQD2N60CTM | 0 | 100 | Bulk | ||||||||
| Avnet | FQD2N60CTM | 0 | 2500 | 4h | ||||||||
| Future Electronics | FQD2N60CTM | 0 | 2500 | Tape & Reel |
Cronologia dell'inventario
Tendenza a 3 mesi: -0.35%
Modelli CAD
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0 parti disponibili
Schede tecniche e documenti
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Modelli CAD
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Supply Chain
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
STMicroelectronicsSTD2LN60K3
N-channel 600 V, 4 Ohm typ., 2 A, SuperMESH3(TM) Power MOSFET in DPAK package
VishayIRFRC20TRPBF
Single N-Channel 600 V 4.4 Ohms Surface Mount Power Mosfet - DPAK (TO-252)
STMicroelectronicsSTD2HNK60Z
N-channel 600 V - 4.4 Ω - 2 A - TO-92/TO-220FP/DPAK/IPAK Zener-protected SuperMESH™2; Power MOSFET
Descrizioni
Descrizioni di onsemi FQD2N60CTM fornite dai suoi distributori.
N-Channel Power MOSFET, QFET®, 600 V, 1.9 A, 4.7 Ω, DPAK
Power MOSFET, N Channel, 600 V, 1.9 A, 3.6 ohm, TO-252AA, Surface Mount
Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N-CH, 600V, 1.9A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:1.9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):3.6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V;
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -0.35%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)1.9 A
Current18 A
Current Rating1.9 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance4.7 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time28 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance235 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation44 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max4.7 Ω
Rise Time25 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time24 ns
Turn-On Delay Time9 ns
Voltage650 V
Voltage Rating (DC)600 V
Dimensions
Height2.517 mm
Length6.73 mm
Width6.22 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FQD2N60CTM.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità