STMicroelectronics STD10NM50N
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | STD10NM50N | 0 | 2500 | 8h | ||||||||
| Farnell | STD10NM50N | 0 | 5 | 1d | ||||||||
| Microchip USA | STD10NM50N | 319 | 3K | Tray | 22h | |||||||
| Component Stockers USA | STD10NM50N | 762 | 20h | |||||||||
| Win Source | WS-STD10NM50N | 8000 | 40 | 7h |
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per STMicroelectronics STD10NM50N.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-12-16
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Parti correlate
STMicroelectronicsSTD11NM50N
N-channel 500 V, 0.40 Ohm typ., 8.5 A MDmesh II Power MOSFET in a DPAK package
STMicroelectronicsSTD10NM65N
N-channel 650 V, 0.43 Ohm, 9 A, DPAK second generation MDmesh(TM) Power MOSFET
Descrizioni
Descrizioni di STMicroelectronics STD10NM50N fornite dai suoi distributori.
STMICROELECTRONICS STD10NM50N MOSFET Transistor, N Channel, 7 A, 500 V, 0.53 ohm, 10 V, 3 V
N-channel 500 V, 0.53 Ohm, 7 A DPAK MDmesh(TM) II Power MOSFET
Power Field-Effect Transistor, 7A I(D), 500V, 0.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N CH, 500V, 7A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.53ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:70W; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Alias del produttore
STMicroelectronics ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. STMicroelectronics può anche essere conosciuto con i seguenti nomi:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Specifiche tecniche
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)7 A
Drain to Source Resistance630 mΩ
Drain to Source Voltage (Vdss)500 V
Fall Time12 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance450 pF
Max Operating Temperature150 °C
Max Power Dissipation70 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingDigi-Reel®
Power Dissipation70 W
Rds On Max630 mΩ
Resistance630 mΩ
Rise Time4.4 ns
Threshold Voltage3 V
Turn-Off Delay Time7.8 ns
Turn-On Delay Time7.8 ns
Dimensions
Height2.4 mm
Length6.6 mm
Width6.2 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per STMicroelectronics STD10NM50N.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant