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onsemi FCD9N60NTM

N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 9 A, 385 mΩ, DPAK
EOL
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Schede tecniche e documenti

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IHS

Datasheet8 pagine12 anni fa
Datasheet0 pagine0 anni fa

onsemi

Fairchild Semiconductor

element14 APAC

Farnell

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Parti alternative

Questo componente
Parti alternative
Price @ 1000
$ 1.18
Stock
176,191
306,923
Authorized Distributors
0
6
Mount
Surface Mount
-
Case/Package
DPAK
-
Drain to Source Voltage (Vdss)
600 V
-
Continuous Drain Current (ID)
9 A
10 A
Threshold Voltage
3 V
-
Rds On Max
385 mΩ
-
Gate to Source Voltage (Vgs)
30 V
-
Power Dissipation
92.6 W
-
Input Capacitance
1 nF
-

Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-02-02
Lifecycle StatusEOL (Last Updated: 6 days ago)
LTB Date2022-09-29
LTD Date2023-03-29
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 6 days ago)

Parti correlate

STMicroelectronicsSTD13NM60N
N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in DPAK package
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 10.2 A, 380 mΩ, DPAK
STMicroelectronicsSTD13NM60ND
N-channel 600 V, 0.32 Ohm typ., 11 A FDmesh(TM) II Power MOSFET (with fast diode) in DPAK package
STMicroelectronicsSTD13N60M2
N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in DPAK package
onsemiFCD7N60TM
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 7 A, 600 mΩ, DPAK
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 7 A, 600 mΩ, DPAK

Descrizioni

Descrizioni di onsemi FCD9N60NTM fornite dai suoi distributori.

N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 9 A, 385 mΩ, DPAK
Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 600V 9A DPAK
Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET,N CH,600V,9A,DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.33ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:83.3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Alias del produttore

onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd