STMicroelectronics STD10NM65N

N-channel 650 V, 0.43 Ohm, 9 A, DPAK second generation MDmesh(TM) Power MOSFET
Obsolete
Pagina del produttoreScheda dati

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DistributorSKUMinPkg
FarnellSTD10NM65N01
1d
Component Stockers USASTD10NM65N251
14h
Win SourceWS-STD10NM65N768045
1h
Worldway ElectronicsSTD10NM65N20.9337Tape & Reel
1d
AztechSTD10NM65N6933
21h

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per STMicroelectronics STD10NM65N.

IHS

Datasheet18 pagine7 anni fa

Newark

Arrow Electronics

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-02-18
Lifecycle StatusObsolete (Last Updated: 4 months ago)

Parti correlate

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STMicroelectronicsSTD11N65M5
N-channel 650 V, 0.43 Ohm typ., 9 A MDmesh M5 Power MOSFET in DPAK package
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onsemiFCD9N60NTM
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 9 A, 385 mΩ, DPAK
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STMicroelectronicsSTD11NM50N
N-channel 500 V, 0.40 Ohm typ., 8.5 A MDmesh II Power MOSFET in a DPAK package
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N-Channel Power MOSFET, UniFETTM II, 500 V, 6.5 A, 850 mΩ, DPAK
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onsemiFCD380N60E
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 10.2 A, 380 mΩ, DPAK
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Descrizioni

Descrizioni di STMicroelectronics STD10NM65N fornite dai suoi distributori.

N-channel 650 V, 0.43 Ohm, 9 A, DPAK second generation MDmesh(TM) Power MOSFET
STMicroelectronics
STD10NM65N N-channel MOSFET Transistor, 9 A, 650 V, 3-Pin TO-252
RS (Formerly Allied Electronics)
MOSFET, N CH, 650V, 9A, TO-252; Transistor Polarity:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:9A; On Resistance Rds(on):0.43ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
Newark

Immagini

Augswan
element14 APAC
RS (Formerly Allied Electronics)
Lanka Micro
Newark

Alias del produttore

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  • SGS-Thomson Microelectronics
  • ST Microeletronics