onsemi MUN5215DW1T1G
$ 0.061
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: +56.63%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi MUN5215DW1T1G.
Scheda dati ufficiale6 anni fa
Modelli CAD
Scarica il simbolo onsemi MUN5215DW1T1G, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 Component Search Engine | SimboloImpronta | 3D | Scarica |
 EE Concierge | SimboloImpronta | ||
 SnapEDA | Impronta | Scarica |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 0.061
$ 0.055
Stock
1,433,179
814,022
Authorized Distributors
6
2
Mount
-
-
Case/Package
SOT-363-6
SOT-363-6
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
50 V
-
Max Collector Current
100 mA
100 mA
Transition Frequency
-
-
Collector Emitter Saturation Voltage
250 mV
-
hFE Min
160
160
Power Dissipation
256 mW
187 mW
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-11-25
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
onsemiMUN5213DW1T1G
Bipolar Transistors (BJT); MUN5213DW1T1G; ON SEMICONDUCTOR; NPN; 6; 50 V; 100 mA
onsemiMUN5214DW1T1G
Bipolar Pre-Biased / Digital Transistor, BRT, Dual NPN, 50 V, 100 mA, 10 kohm, 47 kohm
onsemiMUN5211DW1T1G
Bipolar Pre-Biased / Digital Transistor, BRT, Dual NPN, 50 V, 100 mA, 10 kohm, 10 kohm
Descrizioni
Descrizioni di onsemi MUN5215DW1T1G fornite dai suoi distributori.
ON SEMI MUN5215DW1T1G DUAL NPN BIPOLAR TRANSISTOR, 0.1 A, 50 V, 6-PIN SOT-363
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
Dual NPN Bipolar Digital Transistor (BRT)
MUN5215DW1 Series 1.4 V 100 mA SMT NPN-Pre-Biased Digital Transistor - SOT-363
Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R
Bipolar Transistors - Pre-Biased SS BR XSTR NPN 50V
Transistor Polarity:Dual NPN; Collector Emitter Voltage Max NPN:50V; Collector Emitter Voltage Max PNP:-; Continuous Collector Current:100mA; Base Input Resistor R1:10kohm; Base Emitter Resistor R2:-; No. of Pins:6 Pin RoHS Compliant: Yes
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5211DW1T1 series two BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +56.63%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOT-363-6
Contact PlatingTin
Number of Pins6
Number of Terminals6
Technical
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage250 mV
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current100 mA
Current Rating100 mA
Element ConfigurationDual
Emitter Base Voltage (VEBO)6 V
hFE Min160
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Frequency10 kHz
Max Operating Temperature150 °C
Max Output Current100 mA
Max Power Dissipation385 mW
Min Operating Temperature-55 °C
Number of Elements2
Operating Supply Voltage50 V
PackagingTape and Reel
PolarityNPN
Power Dissipation256 mW
Schedule B8541210080
Voltage Rating (DC)50 V
Dimensions
Height1 mm
Length2.2 mm
Width1.35 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi MUN5215DW1T1G.
Conformità
Classificazione ambientale
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità