onsemi MUN5214DW1T1G

Bipolar Pre-Biased / Digital Transistor, BRT, Dual NPN, 50 V, 100 mA, 10 kohm, 47 kohm
$ 0.059
Production
Pagina del produttoreScheda dati

Prezzo e stock

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DistributorSKUMinPkg
Future Electronics
5
MUN5214DW1T1G384.0003KTape & Reel
Avnet
3
MUN5214DW1T1G75.0003K
13h
Newark
3
MUN5214DW1T1G2391Cut Tape
Master ElectronicsMUN5214DW1T1G42.0003K
Onlinecomponents.comMUN5214DW1T1G42.0003KBulk

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi MUN5214DW1T1G.

IHS

Datasheet11 pagine4 anni fa

Upverter

onsemi

Farnell

element14 APAC

Cronologia dell'inventario

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Supply Chain

Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Parti correlate

onsemiMUN5213DW1T1G
Bipolar Transistors (BJT); MUN5213DW1T1G; ON SEMICONDUCTOR; NPN; 6; 50 V; 100 mA
Dettagli
onsemiMUN5235DW1T1G
Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R / TRANS 2NPN PREBIAS 0.25W SOT363
Dettagli
onsemiMUN5314DW1T1G
Bipolar Pre-Biased / Digital Transistor, BRT, NPN and PNP Complement, 50 V, 50 V, 100 mA, 10 kohm
Dettagli

Descrizioni

Descrizioni di onsemi MUN5214DW1T1G fornite dai suoi distributori.

Bipolar Pre-Biased / Digital Transistor, BRT, Dual NPN, 50 V, 100 mA, 10 kohm, 47 kohm
Avnet Silica
DUAL NPN BIAS RESISTOR TRANSISTOR Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
ComSIT Distribution GmbH
MUN Series 50 V 100 mA 10 kOhm NPN Silicon Dual Bias Resistor Transistor SOT-363
Future Electronics
80@5mA,10V 2 NPN - Pre-Biased 250mW 100mA 50V 500nA SOT-323-6 Digital Transistors ROHS
Dasenic
Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R
Verical
100 mA 50 V 2 CHANNEL NPN Si SMALL SIGNAL TRANSISTOR
Component Stockers USA
TRANS, 50V, 10/47KOHM, SOT-363; Digital Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 47kohm; Resisto
Farnell
Brt Transistor, 50V, 47K/10Kohm, Sot-363; Tensión Colector Emisor V(Br)Ceo:50V; Intensidad De Collector Continua Ic:100Ma; Resitencia Básica De Entrada R1:10Kohm; Resistor R2 Base-Emisor:47Kohm; Ratio De La Resistencia, R1/R2:0.21 |Onsemi MUN5214DW1T1G
Newark
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5211DW1T1 series two BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.
North Star Micro

Immagini

Augswan
element14 APAC
RS
Newark
Future Electronics
TME
Micros
LZChips

Alias del produttore

onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • MUN5214DW1T1G.