onsemi MUN5213DW1T1G
$ 0.064
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | MUN5213DW1T1G | 3000 | 30K | 1d | ||||||||
| Newark | MUN5213DW1T1G | 19.643 | 5 | Cut Tape | ||||||||
| Verical | MUN5213DW1T1G | 4595 | 447 | |||||||||
| Arrow Electronics | MUN5213DW1T1G | 4595 | 1 | |||||||||
| DigiKey | MUN5213DW1T1GOSCT-ND | 58.352 | 1 | Cut Tape |
Cronologia dell'inventario
Tendenza a 3 mesi: +164%
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1 parte disponibile
Schede tecniche e documenti
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Questo componente
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Price @ 1000
$ 0.064
$ 0.055
Stock
5,572,125
2,195,101
Authorized Distributors
6
3
Mount
-
-
Case/Package
SOT-363-6
SOT-363-6
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
50 V
-
Max Collector Current
100 mA
100 mA
Transition Frequency
-
-
Collector Emitter Saturation Voltage
250 mV
-
hFE Min
80
80
Power Dissipation
256 mW
187 mW
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-11-25
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
onsemiMUN5214DW1T1G
Bipolar Pre-Biased / Digital Transistor, BRT, Dual NPN, 50 V, 100 mA, 10 kohm, 47 kohm
onsemiMUN5314DW1T1G
Bipolar Pre-Biased / Digital Transistor, BRT, NPN and PNP Complement, 50 V, 50 V, 100 mA, 10 kohm
onsemiMUN5235DW1T1G
Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R / TRANS 2NPN PREBIAS 0.25W SOT363
Descrizioni
Descrizioni di onsemi MUN5213DW1T1G fornite dai suoi distributori.
Bipolar Transistors (BJT); MUN5213DW1T1G; ON SEMICONDUCTOR; NPN; 6; 50 V; 100 mA
DUAL NPN BIAS RESISTOR TRANSISTOR Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
Dual NPN Bipolar Digital Transistor (BRT)
MUN Series 50 V 100 mA 47 kOhm NPN Silicon Dual Bias Resistor Transistor SOT-363
MUN5213DW1T1G NPN DIGI TRANSISTOR, 100MA 50 V 47 KOHM, RATIO OF 1, 6-PIN SC-88
250mV@ 300¦ÌA,10mA 2 NPN - Pre-Biased (Dual) 385mW 5V 500nA 50V 50V 100mA 2mm*1.25mm*1.1mm
2 NPN pre-biased (Dual) 187mW 100mA 50V SC-70-6(SOT-363) Digital Transistors ROHS
Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R
Bipolar Transistors - Pre-Biased SS BR XSTR NPN 50V
Bipolar Pre-Biased/Digital Transistor, 50 V, 100 Ma, 47 Kohm, 47 Kohm, 1, Sot-363 Rohs Compliant: Yes |Onsemi MUN5213DW1T1G
BRT TRANSISTOR, 50V, 47K/47KOHM, SC88; C; Digital Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 47kohm; Base-Emitter Resistor R2: 47koh
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5211DW1T1 series two BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +164%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOT-363-6
Contact PlatingTin
Number of Pins6
Number of Terminals6
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage250 mV
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current100 mA
Current Rating100 mA
Element ConfigurationDual
hFE Min80
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Output Current100 mA
Max Power Dissipation385 mW
Min Operating Temperature-55 °C
Number of Elements2
Operating Supply Voltage50 V
PackagingTape and Reel
PolarityNPN
Power Dissipation256 mW
Schedule B8541210080
Voltage Rating (DC)50 V
Dimensions
Height900 µm
Length2 mm
Width1.25 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi MUN5213DW1T1G.
Conformità
Classificazione ambientale
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità