onsemi MMBT2222LT1G
$ 0.037
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Distributore
SKU
Min
Pkg
Prezzi all'ingrosso
Cronologia dell'inventario
Tendenza a 3 mesi: +29.38%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Modelli CAD
Scarica il simbolo onsemi MMBT2222LT1G, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 Component Search Engine | SimboloImpronta | 3D | Scarica |
 EE Concierge | SimboloImpronta | ||
 SnapEDA | SimboloImpronta | 3D | Scarica |
 Ultra Librarian | SimboloImpronta | Scarica |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 0.037
$ 0.034
$ 0.034
Stock
5,647,247
144,971,954
144,971,954
Authorized Distributors
6
6
6
Mount
-
-
-
Case/Package
SOT-23
SOT-23
SOT-23
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
30 V
40 V
40 V
Max Collector Current
600 mA
600 mA
600 mA
Transition Frequency
250 MHz
300 MHz
300 MHz
Collector Emitter Saturation Voltage
1.6 V
300 mV
300 mV
hFE Min
75
75
75
Power Dissipation
225 mW
225 mW
225 mW
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1991-03-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
onsemiBC848CLT1G
Bipolar (BJT) Single Transistor, General Purpose, NPN, 30 V, 100 MHz, 300 mW, 100 mA, 100 hFE
Descrizioni
Descrizioni di onsemi MMBT2222LT1G fornite dai suoi distributori.
Bipolar (BJT) Single Transistor, General Purpose, NPN, 30 V, 600 mA, 225 mW, SOT-23, Surface Mount
ON SEMI MMBT2222LT1G NPN BIPOLAR TRANSISTOR, 0.6 A, 30 V, 3-PIN SOT-23
30V 300mW 100@150mA,10V 600mA NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS
Small Signal Bipolar Transistor, 0.6A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
MMBT Series 30 V 600 mA SMT NPN Silicon General Purpose Transistor - SOT-23
Trans GP BJT NPN 30V 0.6A 300mW 3-Pin SOT-23 T/R
Trans Bjt Single, Npn, 30V, 600Ma; |Onsemi MMBT2222LT1G.
onsemi NPNTransistor, SOT-23encapsulation, SMD mount, Maximum DC collector current600 mA, maximum collector-emission voltage30 V
Transistors - Bipolar (BJT) - Single TO-236-3, SC-59, SOT-23-3 1 (Unlimited) Tape & Reel (TR) Surface Mount NPN 100 @ 150mA 10V 1.6V @ 50mA, 500mA -55°C~150°C TJ 10nA ICBO TRANS NPN 30V 0.6A SOT23
TRANSISTOR, BJT, NPN, 30V, 0.6A, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: 250MHz; Power Dissipation Pd: 225mW; DC Collector Current: 600mA; DC Current Gain hFE: 250hFE
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +29.38%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOT-23
Contact PlatingTin
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)60 V
Collector Emitter Breakdown Voltage30 V
Collector Emitter Saturation Voltage1.6 V
Collector Emitter Voltage (VCEO)30 V
Current Rating600 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency250 MHz
Gain Bandwidth Product250 MHz
hFE Min75
Max Breakdown Voltage30 V
Max Collector Current600 mA
Max Frequency250 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation225 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
PolarityNPN
Power Dissipation225 mW
Schedule B8541210080
TerminationSMD/SMT
Transition Frequency250 MHz
Voltage Rating (DC)30 V
Dimensions
Height1.11 mm
Length3.04 mm
Width2.64 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
Dichiarazioni di conformità