onsemi BC848ALT1G

on Semi BC848ALT1G NPN Bipolar Transistor, 0.1 A, 30 V, 3-PIN SOT-23
$ 0.035
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Schede tecniche e documenti

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IHS

Datasheet15 pagine4 anni fa

JRH Electronics

onsemi

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Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-01-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Parti correlate

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TRANS NPN 30V 100MA SOT23 / Bipolar (BJT) Transistor
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TRANS NPN 30V 100MA SOT23 / Bipolar (BJT) Transistor
Bipolar (BJT) Single Transistor, General Purpose, NPN, 30 V, 100 MHz, 300 mW, 100 mA, 100 hFE

Descrizioni

Descrizioni di onsemi BC848ALT1G fornite dai suoi distributori.

ON SEMI BC848ALT1G NPN BIPOLAR TRANSISTOR, 0.1 A, 30 V, 3-PIN SOT-23
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
BC Series 30 V 100 mA SMT NPN Silicon General Purpose Transistor - SOT-23
Trans GP BJT NPN 30V 0.1A 300mW 3-Pin SOT-23 T/R
Transistor NPN 30V 100mA HFE:110 SOT23
TRANSISTOR, NPN, 30V, 100MA, SOT-23-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 225mW; DC Collector Current: 100mA; DC Current Gain hFE: 110hFE;
Bipolar Transistor, Npn, 30V Sot-23; Transistor Polarity:Npn; Collector Emitter Voltage Max:30V; Continuous Collector Current:100Ma; Power Dissipation:225Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi BC848ALT1G.
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 100 / Collector-Emitter Voltage (Vceo) V = 30 / DC Current Gain (hFE) = 150 / Collector-Base Voltage (Vcbo) V = 30 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 225 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 600 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 900 / Reflow Temperature Max. °C = 260

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  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
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Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • BC848ALT1G.